2000 sensitron semiconductor 221 west industry court deer park, ny 11729 - 4681 phone (631) 586 - 7600 fax (631) 242 - 9798 www.sensitron.com sales@sensitron.com sensitron semiconductor technical data data sheet 779, rev. b hermetic power schottky rectifier ultra low reverse leakage 200 c operating temperature applications: switching power supply converters free - wheeling diodes polarity protection diode features: ultra low reverse leakage current soft reverse recovery at low and high temperature very low forward voltage drop low power loss, high efficiency high surge capacity guard ring for enhanced durabil ity and long term reliability guaranteed reverse avalanche characteristics out performs 100 volt ultrafast rectifiers maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 100 v max. average forward current i f(av) 50% duty cycle, rectangular wave form (single) 15 a max. average forward current i f(av) 50% duty cycle, rectangular wave form (common cathode) 30 a max. peak one cycle non - repetitive surge current i fsm 8.3 ms, half sine wave (per leg) 200 a max. thermal r esistance r jc (single) 2.65 c/w max. junction temperature t j - - 65 to +200 c max. storage temperature t stg - - 65 to +175 c electrical characteristics: characteristics symbol condition max. units max. forward voltage drop v f1 @ 15a, pulse, t j = 25 c (per leg) 0.93 v v f2 @ 15a, pulse, t j = 125 c (per leg) 0.77 v max. reverse current i r1 @v r = 100v, pulse, t j = 25 c (per leg) . 1 ma i r2 @v r = 100v, pulse, t j = 125 c (per leg) 1.0 ma max. junction capacitance c t @v r = 5 v, t c = 25 c f sig = 1mhz, v sig = 50mv (p - p) (per leg) 500 pf shd119234 SHD119234P
2000 sensitron semiconductor 221 west industry court deer park, ny 11729 - 4681 phone (631) 586 - 7600 fax (631) 242 - 9798 www.sensitron.com sales@sensitron.com sensitron technical data data sheet 779, rev. b single common cathode 1 2 3 2 1 3 pinout table device type pin 1 pin 2 pin 3 single rectifier cathode anode anode common cathode common cathode anode 1 anode 2 note: the v f curves shown are for the sd125scu100 unpackaged die only. shd119234 SHD119234P mechanical dimensions: in inches / mm lcc - 3p 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 forward voltage drop - v f (v) 10 -2 10 -1 10 0 10 1 instantaneous forward current - i f (a) typical forward characteristics 125 c 200 c 175 c 25 c 0 20 40 60 80 100 120 reverse voltage - v r (v) 10 -4 10 -3 10 -2 10 -1 10 0 10 1 instantaneous reverse current - i r (ma) typical reverse characteristics 25 c 50 c 75 c 100 c 125 c 150 c 200 c 175 c 0 20 40 60 80 100 120 reverse voltage - v r (v) 100 200 300 400 junction capacitance - c t (pf) typical junction capacitance .145 (3.68) .450 (11.43) .140 (3.56)typ. .035 (.89) min. .050 (1.27) .375 (9.53) .037 (.94) .625 (15.88) .415 (10.54) .157 (3.99) .030 (.76) min. 1 2 3
2000 sensitron semiconductor 221 west industry court deer park, ny 11729 - 4681 phone (631) 586 - 7600 fax (631) 242 - 9798 www.sensitron.com sales@sensitron.com sensitron technical data data sheet 779, rev. b shd119234 SHD119234P disclaimer: 1 - the information given herein, including the specifications and dimensions, is subject to change without prior notice to impro ve produ ct characteristics. before ordering, purchasers are advised to contact the sensitron semiconductor sales department for the late st version of the datasheet(s). 2 - in cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail - safe precautions or other arrangement . 3 - in no event sha ll sensitron semiconductor be liable for any damages that may result from an accident or any other cause during operation of the users units according to the datasheet(s). sensitron semiconductor assumes no responsibility for any intellectual proper ty cla ims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4 - in no event shall sensitron semiconductor be liable for any failure in a semiconductor device or any secondary damage resulti n g from use at a value exceeding the absolute maximum rating. 5 - no license is granted by the datasheet(s) under any patents or other rights of any third party or sensitron semiconductor. 6 - the datasheet(s) may not be reproduced or duplicated, in any for m, in whole or part, without the expressed written permission of sensitron semiconductor. 7 - the products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their applicat ion will hinder maintenance of intern ational peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulat ions.
|
